1 features ? rectangular led rf performance ? 450 & 460 nm ? tr-30? C 30 mw min. ? epoxy die attach ? low forward voltage - 3.2 v typical at 20 ma ? 1000-v esd threshold rating ? ingan junction on thermally conductive sic substrate applications ? small lcd backlighting C 0.8 mm & 0.6 mm sideview packages ? mobile appliances ? digital cameras ? car navigation systems ? medium lcd backlighting C 0.8 mm & 0.6 mm sideview packages ? portable pcs ? monitors ? led video displays ? general illumination tr300? leds c xxx tr3041-s xx 00 data sheet crees tr? leds are the newest generation of solid-state led emitters that combine highly effcient ingan materials with crees proprietary device technology and silicon carbide substrates to deliver superior value for the lcd sideview market. the tr leds are among the brightest in the sideview market while delivering a low forward voltage resulting in a very bright and highly effcient solution for the 0.6-mm and 0.8-mm sideview market. the design is optimally suited for industry standard sideview packages as it is die attachable with clear epoxy and has two top contacts, consistent with industry standard packaging. c xxx tr3041-s xx 00 chip diagram d a t a s h e e t : c p r 3 d v r e v . - top view bottom view die cross section anode (+) 80 m diameter tr300 led 300 x 410 m backside t = 140 m bottom surface 155 x 265 m cathode (-) 98 x 98 m subject to change without notice. www.cree.com
copyright ? 2008 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks, and tr, tr30 and tr300 are trademarks of cree, inc. 2 cpr3dv rev. - cree, inc. 4600 silicon drive durham, nc 27703 usa tel: +1.919.313.5300 www.cree.com maximum ratings at t a = 25c notes 1&3 c xxx tr3041-s xx 00 dc forward current 50 ma peak forward current (1/10 duty cycle @ 1 khz) 100 ma led junction temperature 125c reverse voltage 5 v operating temperature range -40c to +100c storage temperature range -40c to +100c electrostatic discharge threshold (hbm) note 2 1000 v electrostatic discharge classifcation (mil-std-883e) note 2 class 2 typical electrical/optical characteristics at t a = 25c, if = 20 ma note 3 part number forward voltage (v f , v) reverse current [i(vr=5v), a] full width half max ( d , nm) min. typ. max. max. typ. c450tr3041-s xx 00 2.7 3.2 3.7 2 20 c460tr3041-s xx 00 2.7 3.2 3.7 2 21 mechanical specifcations c xxx tr3041-s xx 00 description dimension tolerance p-n junction area (m) 260 x 370 35 chip area (m) 300 x 410 35 chip thickness (m) 140 15 au bond pad diameter anode (m) 80 -5, +15 au bond pad thicknesses (m) 1.0 0.5 au bond pad area cathode (m) 98 x 98 -5, +15 bottom area (m) 155 x 265 35 notes: 1. maximum ratings are package dependent. the above ratings were determined using a t-1 3/4 package (with hysol os4000 epoxy encapsulation and clear epoxy die attach) for characterization. ratings for other packages may differ. the forward currents (dc and peak) are not limited by the die but by the effect of the led junction temperature on the package. the junction temperature limit of 125c is a limit of the t-1 3/4 package; junction temperature should be characterized in a specifc package to determine limitations. assembly processing temperature must not exceed 325c (< 5 seconds). 2. product resistance to electrostatic discharge (esd) according to the hbm is measured by simulating esd using a rapid avalanche energy test (raet). the raet procedures are designed to approximate the maximum esd ratings shown. 3. all products conform to the listed minimum and maximum specifcations for electrical and optical characteristics when assembled and operated at 20 ma within the maximum ratings shown above. effciency decreases at higher currents. typical values given are within the range of average values expected by manufacturer in large quantities and are provided for information only. all measurements were made using lamps in t-1 3/4 packages (with hysol os4000 epoxy encapsulant and clear epoxy die attach). optical characteristics measured in an integrating sphere using illuminance e.
copyright ? 2008 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks, and tr, tr30 and tr300 are trademarks of cree, inc. 3 cpr3dv rev. - cree, inc. 4600 silicon drive durham, nc 27703 usa tel: +1.919.313.5300 www.cree.com standard bins for c xxx tr3041-s xx 00 led chips are sorted to the radiant fux and dominant wavelength bins shown. a sorted die sheet contains die from only one bin. sorted die kit (c xxx tr3041-s xxxx ) orders may be flled with any or all bins (c xxx tr3041- xxxx ) contained in the kit. all radiant fux and dominant wavelength values shown and specifed are at if = 20 ma. dominant wavelength tr-30 c450tr3041-s3000 c450tr3041-0209 c450tr3041-0210 c450tr3041-0211 c450tr3041-0212 c450tr3041-0205 c450tr3041-0206 c450tr3041-0207 c450tr3041-0208 c450tr3041-0201 c450tr3041-0202 c450tr3041-0203 c450tr3041-0204 447.5 nm 450 nm 452.5 nm 445 nm 455 nm 35.0 mw 33.0 mw 30.0 mw radiant flux tr-30 c460tr3041-s3000 c460tr3041-0209 c460tr3041-0210 c460tr3041-0211 c460tr3041-0212 c460tr3041-0205 c460tr3041-0206 c460tr3041-0207 c460tr3041-0208 c460tr3041-0201 c460tr3041-0202 c460tr3041-0203 c460tr3041-0204 dominant wavelength 457.5 nm 460 nm 462.5 nm 455 nm 465 nm 35.0 mw 33.0 mw 30.0 mw radiant flux
copyright ? 2008 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks, and tr, tr30 and tr300 are trademarks of cree, inc. 4 cpr3dv rev. - cree, inc. 4600 silicon drive durham, nc 27703 usa tel: +1.919.313.5300 www.cree.com characteristic curves these are representative measurements for the tr led product. actual curves will vary slightly for the various radiant fux and dominant wavelength bins. copyright ? 2007, cree, inc. pg. 1 characterization 0 20 40 60 80 100 120 320 420 520 620 relative intensity (%) wavelength (nm) relative intensity vs peak wavelength relative intensity vs forward voltage 0 20 40 60 80 100 120 140 160 180 200 220 0 10 20 30 40 50 if (ma) % relative intensity 0.00 0.50 1.00 1.50 2.00 2.50 0 10 20 30 40 50 % intensity if (ma) relative intensity vs. forward current 0 10 20 30 40 50 0 1 2 3 4 5 if (ma) vf (v) forward current vs. forward voltage 0.00 0.50 1.00 1.50 2.00 2.50 0 10 20 30 40 50 % intensity if (ma) relative intensity vs. forward current 0 10 20 30 40 50 0 1 2 3 4 5 if (ma) vf (v) forward current vs. forward voltage - 2.00 - 1.50 - 1.00 - 0.50 0.00 0.50 1.00 1.50 0 10 20 30 40 50 shift (nm) if (ma) wavelength shift vs. forward current relative intensity vs peak wavelength
copyright ? 2008 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks, and tr, tr30 and tr300 are trademarks of cree, inc. 5 cpr3dv rev. - cree, inc. 4600 silicon drive durham, nc 27703 usa tel: +1.919.313.5300 www.cree.com radiation pattern this is a representative radiation pattern for the tr led product. actual patterns will vary slightly for each chip.
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